TANTRAVIWAT, D.; YAMWONG, W.; TECHAKIJKAJORN, U.; IMAI, K.; INCEESUNGVORN, B. Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation. Walailak Journal of Science and Technology (WJST), [S. l.], v. 15, n. 11, p. 803–809, 2018. DOI: 10.48048/wjst.2018.5968. Disponível em: https://wjst.wu.ac.th/index.php/wjst/article/view/5968. Acesso em: 3 may. 2024.