Strain-Induced Band Profile of Stacked InAs/GaAs Quantum Dots
Keywords:
Stacked quantum dots, strain distribution, k.p methodAbstract
The strain distribution and band profile in triply stacked InAs/GaAs quantum dots with dot spacing of 0.0 - 6.0 nm was calculated. The continuum elasticity theory for strain distribution and 8-band k.p theory for band structure was used. The use of the k.p method to calculate band structure with and without including the effects of strain is reported. The calculated results show the importance of strain effect on the confinement potential of the band structure for triply stacked InAs/GaAs quantum dots.doi:10.14456/WJST.2014.18
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M Grundmann. Nano-Optoelectronics: Concepts, Physics and Devices. Springer-Verlag, New York, 2002, p. 167-99.
T Nakaoka, T Tatebayashi and Y Arakawa. Spectroscopy on single columns of vertically aligned InAs quantum dots. Physica E 2004; 21, 409-13.
T Saito, T Nakaoka, T Kakitsuka, Y Yoshikuni and Y Arakawa. Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6 nm. Physica E 2005; 26, 217-21.
T Kita, O Wada, H Ebe, Y Nakata and M Sugawara. Polarization-independent photoluminescence from columnar InAs/GaAs self-assembled quantum dots. Jpn. J. Appl. Phys. 2002; 41, L1143-L1145.
T Kita, P Jayavel, O Wada, H Ebe, Y Nakata and M Sugawara. Polarization controlled edge emission from columnar InAs/GaAs self-assembled quantum dots. Phys. Stat. Sol. C 2003; 0, 1137-40.
T Saito, H Ebe, Y Arakawa, T Kakitsuka and M Sugawara. Optical polarization in columnar InAs/GaAs quantum dots: 8-band k⋅p calculations. Phys. Rev. B 2008; 77, 195318-28.
J Andrzejewski, G Sęk, E O’Reilly, A Fiore and J Misiewicz. Eight-band k⋅p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots. J. Appl. Phys. 2010; 107, 073509-20.
O Stier. Electronic and Optical Properties of Quantum Dots and Wires. Wissenschaft & Technik Verlag, Germany, 2000, p. 35-40.
C Pryor, J Kim, LW Wang, AJ Williamson and A Zunger. Comparison of two methods for describing the strain profiles in quantum dots. J. Appl. Phys. 1998; 83, 2548-54.
Z Wei, Y Zhong-Yuan and L Yu-Min. Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions. Chin. Phys. B 2010; 19, 067302-5.
C Pryor. Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations. Phys. Rev. B 1998; 57, 7190-5.
EISPACK, Available at: http://www.netlib.org/eispack, accessed October 2012.
M Grundmann, O Stier and D Bimberg. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure. Phys. Rev. B 1995; 52, 11969-81.
T Nakaoka, T Kakitsuka, T Saito, S Kako, S Ishida, M Nishioka, Y Yoshikuni and Y Arakawa. Strain-induced modifications of the electronic states of InGaAs quantum dots. J. Appl. Phys. 2003; 94, 6812-7.
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