Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Doldet TANTRAVIWAT; Wittawat YAMWONG; Udom TECHAKIJKAJORN; Kazuo IMAI; Burapat INCEESUNGVORN

doi:10.48048/wjst.2018.5968

Authors

Doldet TANTRAVIWAT Department of Electrical Engineering, Faculty of Engineering, Chiang Mai University, Chiang Mai 50200
Wittawat YAMWONG Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao 24000
Udom TECHAKIJKAJORN Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao 24000
Kazuo IMAI Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao 24000
Burapat INCEESUNGVORN Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200

DOI:

https://doi.org/10.48048/wjst.2018.5968

Keywords:

Schottky diode, Schottky barrier engineering, shallow implantation, titanium

Abstract

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´10¹² cm^-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.

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