Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation



Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.


Schottky diode, Schottky barrier engineering, shallow implantation, titanium

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N Newman, MV Schilfgaarde, T Kendelwicz, MD Williams and WE Spicer. Electrical study of Schottky barriers on atomically clean GaAs (110) surface. Phys. Rev. B 1986; 33, 1146-59.

Y Yamashita, S Machida, T Sugiyama and J Saito. Kanushiki Kaisha Toyota Chuo Kenkyusho, Toyota Jidosha Kabushiki Kaisha. Diode, Semiconductor Device, and MOSFET. World Intellectual Property Organization WO 2013/014943 A2.

WC Huang, TC Lin, CT Hong and CC Chen. Barrier heights engineering of Al/p-Si Schottky contact by a thin organic interlayer. Microelec. Eng. 2013; 107, 200-4.

M Tao, D Udeshi, N Basit, E Maldonado and WP Kirk. Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium. Appl. Phys. Lett. 2003; 82, 1559.

SS Li, JS Kim and KL Wang. Enhancement of effective barrier height in Ti-silicon Schottky diode using low-energy ion implantation. IEEE Tran. Elec. Dev. 1980; 27, 1310-2.

QT Zhao, U Breuer, E Rije, S Lenk and S Mantl. Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation. Appl. Phys. Lett. 2005; 86, 062108.

Z Zhang, Z Qui, R Liu, M Ostling and SL Zhang. Schottky-barrier height tuning by means of ion implantation into preformed Silicide films followed by drive-in anneal. IEEE Elec. Dev. Lett. 2007; 28, 565-8.

E Alptekin, MC Ozturk and V Misra. Tuning of the Platinum Silicide Schottky barrier height on n-type Silicon by Sulfur segregation. IEEE Elec. Dev. Lett. 2009; 30, 331-3.

SM Koh, X Wang, T Thanigaivelan, T Henry, Y Erokhin, GS Samudra and YC Yeo. Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal. J. Appl. Phys. 2011; 110, 073703.

F Ravaux, E Dubois and Z Chen. Schottky barrier height reduction using strained Silicon-On-Insulator and dopant segregation. Microelec. Eng. 2012; 98, 391-4.

E H Rhoderick and R H Williams. Metal-Semiconductor Contacts. 2nd eds. Clarendon Press, Oxford, 1988.

G Mohammad, R Khairunisak and C Kuan. Schottky barrier height engineering of Al contacts on Si by embedded Au nanoparticles. Microelec. Eng. 2015; 113, 110-9.

SM Sze and KK Ng. Physics of Semiconductor Devices. 3rd eds. Wiley-Interscience, New Jersey, 2007.

M Mueller, QT Zhao, C Urban, C Sandow, D Buca, S Lenk, S Estevez and S Mantl. Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation. Mater. Sci. Eng. B 2008; 154-155, 168-71.

BE Coss, WY Loh, RM Wallace, J Kim, P Majhi and R Jammy. Near band edge Schottky barrier height modulation using high-Ƙ dielectric dipole tuning mechanism. Appl. Phys. Lett. 2009; 95, 222105.

AM Cowley. Titanium-silicon Schottky barrier diodes. Solid-State Electron. 1970; 13, 403-14.

I Jyothi, HD Yang, KH Shim, V Janardhanam, SM Kang, H Hong and CJ Choi. Temperature dependency of Schottky barrier parameters of Ti Schottky contacts to Si-on-insulator. Mater. Trans. 2013; 54, 1655-60.

RL Ohta, CE Viana, NI Morimoto and BV Borges. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. J. Integr. Circuits Syst. 2007; 2, 85-8.


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Last updated: 12 August 2019