Anisotropic Magnetoresistance of Cobalt Films Prepared by Thermal Evaporation

Authors

  • Yuttanun PANSONG Magnet Laboratory, Experimental Physics Research Unit, School of Science, Walailak University, Thasala, Nakon Si Thammarat 80161
  • Chitnarong SIRISATHITKUL Magnet Laboratory, Experimental Physics Research Unit, School of Science, Walailak University, Thasala, Nakon Si Thammarat 80161

Keywords:

Magnetoresistance, AMR, Thermal evaporation, Thin films

Abstract

Cobalt films on silicon substrates were prepared by thermal evaporation. By evaporating 0.05 g of cobalt for 80-240 s, a thickness from 21.1 to 67.7 nm was obtained with a deposition rate about 0.26-0.32 nm per second. The 29 nm-thick cobalt film exhibited magnetoresistance (MR) ranging from -0.0793% (field perpendicular to the current) to +0.0134% (field parallel to the current) with saturation in a 220 mT magnetic field. This MR was attributed to anisotropic magnetoresistance (AMR) since changing the angle between the field and the current (θ) gave rise to a change in the electrical resistance (Rθ). The results agreed with the theory since the plot between Rθ and cos2θ could be linearly fitted. AMR was not observed in non-ferromagnetic gold films whose resistance was insensitive to the angle between the current and magnetic field.

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References

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Published

2011-12-09

How to Cite

PANSONG, Y., & SIRISATHITKUL, C. (2011). Anisotropic Magnetoresistance of Cobalt Films Prepared by Thermal Evaporation. Walailak Journal of Science and Technology (WJST), 2(1), 71–80. Retrieved from https://wjst.wu.ac.th/index.php/wjst/article/view/176

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Research Article

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