Study on Physical Properties of Inx Se1-x Thin Films Synthesized by Vacuum Evaporation Method

Mahdi Hasan SUHAIL; Issam Mohammed IBRAHIM; Asmiet RAMIZY

Authors

Mahdi Hasan SUHAIL Department of Physics, College of Science, University of Baghdad
Issam Mohammed IBRAHIM Department of Physics, College of Science, University of Baghdad
Asmiet RAMIZY Department of Physics, College of Science, University of Anbar

Keywords:

Indium Selenide, vacuum evaporation, annealing, energy gap, optical constants

Abstract

Indium Selenide (In_xSe_1-x) thin films were synthesized in a sealed ampoule in a vacuum of 10^-2 Torr using high purity elemental indium and selenium with different x concentration (0, 10, 15 % at.wt.) using vacuum evaporation technique. The structural properties of In_xSe_1-x alloys for (x = 10 and 15 % at. wt.) were examined by x-ray diffraction and exhibited a polycrystalline structure with hexagonal unit cell. The effects of the indium concentration and post deposition heat treatment on the structural and optical properties of the films were studied. The direct band gap of In_xSe₁_-xthin films were estimated in the range (2.35 - 3.95) eV and the energy gap (E_g^opt) increases with increasing annealing temperatures. Optical constants (included refractive index (n), extinction coefficient (k), and real (e_r) and imaginary parts (e_i) of dielectric constant) for the above films were calculated. The results were discussed in detail in relation with film recrystallization during the heating process.

doi:10.14456/WJST.2014.82

Downloads

Download data is not yet available.

Metrics

Metrics Loading ...

Author Biography

Asmiet RAMIZY, Department of Physics, College of Science, University of Anbar

Asmiet Ramziy received the Ph.D degree from University sains Malaysia-school of physics, in 2011 and the Masters degree in Physics from Mustansiriya University- collage of -Iraq, in 1999, currently, Lecturer at Al-Anbar University, Iraq, since 2001. Participated in the chapter book. Title "Solar Cells", ISBN: 978-953-307-316-3. InTech Open Access Publisher. 2011.Participated in many national and international conferences and workshops and published 23 papers in ISI journals and 7 papers in non-ISI journals. One of the listed scientist in the is who^’s who in the world, for 2012 -29^th Edition. Research interested in nanostructured materials and their applications, Laser-Induced Etching and porous solar cell.

References

C DeBlasi, G Micocci, A Rizzo and A Tepore. Large InSe single crystal grown from stoichiometric and non- stoichiometric melts. J. Crystal Growth. 1982; 57, 482-6.

M Parlak and C Ercelebi. The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films. J. Mater. Sci. Mater. Electron. 1999; 10, 313-9.

S Chaudhuri, SK Biswas and A Choudhury. The effects of heat treatment on the structural properties of amorphous In30 Se70 films. Phys. Stat. Sol. 1988; 109, 511-6.

A Segura, JP Guesdon, JM Besson and A Chevy. Photoconductivity and photovoltaic effect in InSe. J. Appl. Phys. 1983; 54, 876-88.

T Matsushita, TT Nang, M Okuda, A Suziki and S Yokota. Photovoltaic effect of amorphous InxSe1-x-SnO2 heterostructure. Jpn. J. Appl. Phys. 1976; 15, Article ID 901.

J Martinez-Pastor, A Segura, JL Valdes and A Chevy. Electrical and photovoltaic properties of indium-tin-oxide/p-InSe/Au solar cells. J. Appl. Phys. 1987; 62, 1477-83.

C Tatsuyama, T Tanbo and N Nakayama. Heteroepitaxy between layered semiconductors GaSe and InSe. Appl. Surf. Sci. 1989; 41-42, 539-43.

R Rousina. Influence of deposition temperature on the crystallization of thermally evaporated indium selenide thin films. J. Mater. Sci. Lett. 1988; 7-8, 893-4.

Y Hasegava and Y Abe. Electrical and optical characteristics of a schottky barrier on a cleaved surface of the layered semiconductor InSe. Phys. Stat. Sol. 1982; 70, 615-21.

MD Guilio, G Micocci, A Rizzo and A Tepore. Photovoltaic effect in gold-indium selenide Schottky barriers. J. Appl. Phys. 1983; 54, Article ID 5839.

JC Bernede, S Marsillac, A Conan and A Goday. The influence of microcrystalline inhomogeneities embedded in amorphous InxSe100-x films on their electrical and optical properties. J. Phys.: Cond. Mater. 1996; 8, Article ID 3439.

M Parlak and C Erçelebi. The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films. Thin Solid Films 1998; 322, 334-9.

SM Yu, JH Yoo, SP Patole, JH Lee and JB Yoo. The effect of pressure and growth temperature on the characteristics of polycrystalline In2Se3 films in metal organic chemical vapor deposition. Elec. Mater. Lett. 2012; 8, 245-50.

A Chevy, A Kuhn and MS Martin. Large InSe monocrystals grown from a non-stoichiometric melt. J. Cryst. Growth 1977; 38, 118-22.

E Mooser. Physics and Chemistry of Material with Layered Structures. Reidel, Dordrecht, 1976.

MA Afifi, NA Hegab and AE Bekheet. Effect of annealing on the electrical properties of ln2Se3 thin films. Vacuum 1995. 46, 335-9.

C Julien, M Eddreif, K Kambas and M Balkanski. Electrical and optical properties of In2Se3 thin films. Thin Solid Films 1986; 137, 27-37.

K Bindu, C Sudhakartha, KP Vijayakumar, T Abe and Y Kashiwaba. Structural, optical and electrical properties of In2Se3 thin films formed by annealing chemically deposited Se and vacuum evaporated In stack layers. Appl. Surf. Sci. 2002; 191, 138-47.

ABA Ei-Moiz, MA Hefni, FM Reicha and MM Hafiz. Optical investigations on InxSe1-x thin films (II). Phys. B Cond. Mater. 1993; 191, 303-11.

M Parlak. The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films. Thin Solid Films 1998; 322, 334-9.

HT Ei-Shair and AE Bekheet. Effect of heat treatment on the optical properties of In2Se3 thin films. J. Phys. D: Appl. Phys. 1992; 25, Article ID 1122.

B Samanta, SL Sharma and AK Chaudhuri. Optical andmicro structural properties of Cd0.8 Zn0.2 Te thin films. Indian J. Pure Appl. Phys. 1994; 32, 62-7.